发明名称 |
Semiconductor memory device with bit line pairs crossed at least once with respect to each other |
摘要 |
A semiconductor memory device of the type with a plurality of bit line pairs and signal lines disposed parallel to these bit line pairs is characterized in that two bit lines forming a pair are crossed at least once in the middle to prevent capacitance imbalance caused by misalignment of the associated signal line.
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申请公布号 |
US4916661(A) |
申请公布日期 |
1990.04.10 |
申请号 |
US19890326434 |
申请日期 |
1989.03.17 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
NAWAKI, MASARU;HIGASHINO, HIROFUMI;TAGAMI, TOMOYUKI |
分类号 |
G11C11/401;G11C11/4097 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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