发明名称 |
Method of preventing dielectric degradation or rupture |
摘要 |
Charge on a floating gate of a semiconductor device structure is neutralized by illuminating the structure with a high intensity light during process steps that inject charge. The light provides for the formation of electrons, or free carriers, in the semiconductor substrate. The electrons facilitate tunneling which prevents dielectric degradation or rupture.
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申请公布号 |
US4916082(A) |
申请公布日期 |
1990.04.10 |
申请号 |
US19890322945 |
申请日期 |
1989.03.14 |
申请人 |
MOTOROLA INC. |
发明人 |
LESK, ISRAEL A.;LUND, CLARENCE A.;SMITH, THOMAS C. |
分类号 |
H01L21/28;H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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