| 摘要 |
PURPOSE:To obtain preferable Schottky junction between one conductive type semiconductor and a W-Ti alloy by implanting ions capable of forming one conductive semiconductor in a semiconductor, covering the implanted layer with W-Ti alloy, and nitrided W-Ti alloy, heat treating it at a high temperature, thereby activating the ion implanted layer. CONSTITUTION:Impurity ions of Si, Se, S, or Sn which become one conductive type impurity are implanted on a high resistance GaAs substrate 1, thereby forming an ion implanted layer 2. Then, a W-Ti alloy 3 and a nitrided W-Ti alloy 4 are sequentially coated on the layer 2, it is then heat treated in inert gas of 850 deg.C for approx. 10min, thereby converting the layer 2 into an active layer, and a Schottky junction is formed between the layer and the W-Ti. Thereafter, the gate electrode corresponding part is covered with a protecting film 5 such as resist, is etched with plasma with CF4 gas or the like, thereby removing the exposed parts of the alloys 4, 3. Then, the film 4 is removed, and source and drain electrodes 7, 8 are mounted at an interval at both sides of the gate electrode 6 mad of the alloys 4, 3 remaining under the film 4. |
