| 发明名称 |
Method for etching tungsten |
| 摘要 |
A process wherein a thin film of tungsten is anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes an etchant and a carbon containing gas. This chemistry provides anisotropic high rate fluoro-etching with good selectivity to photoresist.
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| 申请公布号 |
US4915777(A) |
申请公布日期 |
1990.04.10 |
| 申请号 |
US19890318035 |
申请日期 |
1989.03.02 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
JUCHA, RHETT B.;DOUGLAS, MONTE A.;DAVIS, CECIL J. |
| 分类号 |
C23C16/517;C23F4/00;H01J37/32;H01L21/00;H01L21/3213;H01L21/677 |
主分类号 |
C23C16/517 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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