| 摘要 |
PURPOSE:To miniaturize a transistor as a memory-cell by forming a collector region, a base region and an emitter region through a self-alignment system. CONSTITUTION:A collector leading-out layer 6 and an inter-layer insulating film 7 are formed onto an active region, an opening is shaped to the inter-layer insulating film 7 and the collector leading-out layer 6, and sidewall films 8 covering the sidewalls of the opening are formed. An impurity is introduced twice through the opening, and a base region 9, thickness of which does not exceed the thickness of the sidewall films 8, and an emitter region 10 shaped in the base region 9 are formed. Consequently, since all of a base, an emitter and a collector are shaped through a self-alignment system, the allowance of the positioning of a mask need not be considered, and the base region 9 and the emitter region 10, width of which is made lower than the minimum pattern width of the mask, can be realized. Accordingly, a transistor as a memory-cell is fined. |
