| 摘要 |
PURPOSE:To remarkably reduce negative charge of a photosensitive body by doping a charge transfer layer of an Se function separating laminated type photosensitive body with a halogen element. CONSTITUTION:The title electrophotographic sensitive body is constituted of a charge transfer layer 2 having >=30mum and <=90mum thickness consisting of an Se-As alloy contg. >=5atom.% and <=40atom.% As, a charge generating layer 3 having >=0.5mum and <=2.0mum thickness consisting of an Se-Te alloy contg. >=20atom.% and <=40atom.% Te, and a surface protective layer 4 having >=2mum and <=5Xm thickness consisting of an Se-As alloy contg. >=5atom.% and <=40atom.% As, all being laminated successively on an electroconductive substrate 1, wherein >=2,000 and <=10,000ppm halogen element is contained in the charge transfer layer 2. By doping the Se-As alloy forming the charge transfer layer 2 with a halogen element such as Cl, Br, I, etc., a shallow impurity level is formed in an energy band gap of the Se-As alloy due to the halogen element, injection efficiency into holes from the electroconductive substrate into the charge transfer layer 2 is improved, and hole mobility in the charge transfer layer 2 is also improved. Thus, negative charge on the surface of the photosensitive body is retarded. |
