SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To decrease short circuits in a pattern and increase capacitance without making the thickness of a conductive film thick by providing the device with a first conductive film having at least either one out of stepped parts at a part that is separated from the first insulating film and on the surface of its insulating film. CONSTITUTION:This device is equipped with the following members: a semiconductor substrate 1; protrusions 4 which are formed on the semiconductor substrate 1; a first insulating films 5b which are formed on surfaces of the protrusions 4; a first conductive film 7 which is formed on the first insulating films 5b and on the semiconductor substrate 1 and then, on the first insulating films 5b, has at least either one out of stepped parts at a part that is separated from the first insulating films 5b and on the surface of the above insulating films; a second insulating film 8 which is formed so that the first conductive film 7 is coated; and a second conductive film 9 which is formed on the second insulating film 8. As the first conductive film 7 has at least one among the stepped parts on the first insulating films 5b at a part that is separated from the first insulating films 5b as well as on the surface of the insulating films 5b, its surface area increases. Such an increase in the area thus contrives the decrease of short circuits and the increase of capacitance without making the thickness of the conductive film thick.