| 摘要 |
PURPOSE:To suppress the variation in the sensor area of each bit as well as to eliminate the non-uniformity of the voltage applied to the sensing part of the titled sensor by a method wherein the transparency-deteriorated edge part of a narrow-stripped transparent electrode is coated by a non-light-transmitting metal film, and voltage is applied to the transparent electrode through said non-light-transmitting metal film. CONSTITUTION:On a glass substrate 1, a lower metal electrode 2 is formed with its sensing part formed in a longtudinally long rectangle. An optical semiconductor thin film 3, consisting of a non-amorphous or polycrystalline semiconductor, is coated on the electrode 2. Besides, on the above electrode 2, a narrow-stripped transparent electrode 4 of almost the same width as that of the lower metal electrode in longitudinal direction is provided. On the top of the above, a non-light-transmitting metal thin film 5 is formed in such a manner that the film 5 is covering the low light-transmitting edge part located at both ends of the narrow-stripped transparent electrode 4. Both of the left and right ends of said non-light-transmitting metal thin film 5 are connected to the voltage supplying source terminal (not shown in the diagram) which supplies voltage to the narrow-stripped transparent electrode 4. Voltage is applied to the narrow-stripped transparent electrode 4 by the metal thin film 5, and bias voltage is applied to an optical semiconductor thin film 3 located between electrodes 2 and 4. Accordingly, electric charge can be stored in the thin film 3. |
