发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent an insulating film from being damaged during an ultrasonic thermocompression bonding operation by interposing a barrier metal between the insulating film and interconnections in a bonding pad section. CONSTITUTION:A barrier metal layer 8 is formed of a barrier metal such as titanium, tungsten, molybdenum or the like between an insulating film 2 and at least a bonding pad section of Al interconnections 4 over a silicon substrate 1. This barrier metal layer 8 buffers load or ultrasonic waves exerted during ultrasonic thermocompression bonding of a lead wire 6 and prevents the insulating film 2 from being damaged thereby. Thus, removal of the lead wire can be prevented effectively.
申请公布号 JPH0294451(A) 申请公布日期 1990.04.05
申请号 JP19880245643 申请日期 1988.09.29
申请人 MATSUSHITA ELECTRON CORP 发明人 SHIOSAKI HIROYUKI
分类号 H01L21/60 主分类号 H01L21/60
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