| 摘要 |
PURPOSE:To reduce reactive current to a crosswise direction of a groove by forming the groove in a direction <100> and by making a slanting surface of the groove wall side from a plane or {111} V-group. CONSTITUTION:After a first plate clad layer 2 and a current blocking layer 3 are formed successively on a {100} p-GaAs substrate 1, a groove 4 is formed in a direction <100>. Etchant should be selected so that a slanting surface 4b of the groove 4 is made in a normal mesa shape to allow the groove 4 to be buried completely by the following second growth. Here, the slanting surface 4b is made a plane azimuth which is near {111} B plane (B-plane is V atomic plane) by forming the groove 4 of normal mesa shape through side etching under an etching mask by use of isotropic, not anisotropic, etchant. Reactive current along the slanting surface 4b is thereby reduced, thus improving laser oscillation efficiency. |
