| 摘要 |
PURPOSE:To form a gate electrode in high heat resistance and controllability by a method wherein a TiN film in a specified film thickness is deposited on an Si film doped with impurity and after annealing in NR3 atmosphere, a W film is formed on TiN and WN film. CONSTITUTION:A TiN film 30-800Angstrom thick is deposited by sputtering process on an a<+>-poly Si film on an SiO2 layer to be later lamp-annealed at 900 deg.C in NH3 atmosphere. Consequently, the TiN film is nitrified to form TiN and WN films. At this time, Tisix is formed but exercising no unfavorable effect on the heat resistance due to the thin effective film thickness of Ti by substituting TiW for Ti. Later, the W film 1 is deposited and simultaneously heat-treated at high temperature of 950-1000 deg.C to complete a gate electrode. Through these procedures, the gate electrode in high heat resistance can be formed. |
