| 摘要 |
PURPOSE:To reduce crystal defects of a hetero-epitaxial film by a method wherein a first semiconductor is provided with a semiconductor element formed on a second semiconductor on a region which has been selectively etched partially. CONSTITUTION:An Si epitaxial layer 4 is formed on an Si substrate 1; a superlattice 3, in succession, undoped GaAs 5 and n-type GaAs 6 are grown continuously; a high-temperature annealing operation is executed. After that, the Si substrate 1 and the Si epitaxial layer 4 in a required part are etched selectively by using an etchant such as sulfuric acid or the like in such a way that only Si is etched and that GaAs is not etched. In succession, a protective film 8 is formed; after that, an Si element 9 having a memory function of Si is formed on the Si epitaxial layer 4. Thereby, a peak intensity of photoluminescence in a part where Si in a substratum has been removed and in a part where it has not been removed amounts to 5:1; defects in the part where the Si has been removed can be reduced. |
