发明名称 FORMATION OF P-N JUNCTION OF ZINC CHALCOGENITE CRYSTAL
摘要 PURPOSE:To obtain pure blue luminescence by using a method to form a p-n junction of a zinc chalcogenite crystal. CONSTITUTION:An n-type zinc chalcogenite crystal containing at least one out of selenium and sulfur is arranged inside an open-type reaction container. An organic metal gas having a group I element as a constituent element flows into the reaction container; the group I element is diffused to the zinc chalcogenite crystal; alternatively, Li is diffused to the n-type zinc chalcogenite crystal by using at least one out of a selenide and a sulfide of Li as a diffusion source. Accordingly, the group I element of a comparatively large diffusion coefficient can be diffused to the n-type zinc chalcogenite crystal containing at least one out of selenium and sulfur with good reproducibility and with good mass productivity. Thereby, pure blue luminescence can be obtained.
申请公布号 JPH0294672(A) 申请公布日期 1990.04.05
申请号 JP19880247189 申请日期 1988.09.30
申请人 TOSHIBA CORP 发明人 HACHIMAN AKIHIRO;HIRAHARA KEIJIROU;UEMOTO TSUTOMU;MIHASHI HIROSHI
分类号 H01L21/365;H01L33/28;H01L33/30 主分类号 H01L21/365
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