| 摘要 |
An improved method for producing a semiconductor structure which comprises a refractory metal silicide layer on a silicon semiconductor substrate includes the step of depositing a layer of refractory metal on a silicon substrate in the presence of nitrogen. The substrate is heated to a temperature and for a time sufficient to form the silicide by reaction between the refractory metal and the substrate. The (partial) pressure of nitrogen is insufficient for nitrogen impregnating the refractory metal layer during the deposition step then to form a layer of refractory metal nitride during the heating. This (partial) pressure generally does not exceed 6 x 10<-><6> torr. Deposition of the layer of refractory metal may be carried out in the presence of a very dilute mixture of nitrogen and an inert gas. Preferred mixtures contain less than about 1 percent by volume of nitrogen. |
