| 摘要 |
PURPOSE:To obtain a semiconductor laser of a simpler structure than that of a conventional one having a high output, and a high speed modulation by employing an Fe-doped semi-insulating InP layer as a current blocking layer, effectively injecting a current to the active layer in a groove, increasing the length of a resonator, and further providing a film for reducing reflectivity into the resonator of a laser light at the edge face on the emitting side. CONSTITUTION:A semiconductor laser has a P-type InP substrate 41 (100), a Fe(iron)-doped semi-insulating InP layer 43 on the substrate 41, a V-shaped sectional stripelike groove 45 having a stripe direction from the front face of the layer 43 to the substrate 41 is in a plane [011] and the section perpendicular to the stripe direction, a P-type InP clad layer 47, a GaInAsP active layer 49 and an N-type InP clad layer 51 formed sequentially from the substrate 41 in the groove 45. Further, in the laser, its resonator length L is of the larger value in a range that the laser output increase obtained by increasing the length L is larger than the laser output decrease obtained by an internal loss, and a film 53 for reducing reflectivity to the resonator of a laser light is formed on the end face of the resonator at the emitting side. Thus, a high output operation can be performed. |
