| 摘要 |
PURPOSE:To install an aperture having a taper on a polysilicon layer with excellent reproducibility, and reduce the manufacturing process of a DRAM by performing wet etching after an impurity is introduced into the polysilicon layer. CONSTITUTION:A polysilicon layer 2 is grown on a semiconductor substrate 1; phosphorus is thermally diffused in the layer 2, and then phosphorus is ion- implanted; by laser annealing, ion-implanted phosphorus particle is activated; after a photo resist film 3 is formed, patterning is performed. When the layer 2 is wet-etched by using the film 3 as a mask, an aperture 20 having a taper is formed in the layer 2. Next, the film 3 is eliminated. |
