| 摘要 |
PURPOSE:To prevent the generation of electric short by a method wherein, when a bonding pad wire is connected with a bonding pad by bonder, the layer of an insulative film is not arranged just under a metal layer. CONSTITUTION:On a GaAs semiinsulative substrate 1, the following are formed in order by molecular beam epitaxy; an N-type collector layer 2, a P-type base layer 3 and an N-type emitter layer 4. By using Ti/Au as a mask, H<+> ion is implanted to form an ion implanted insulating layer 5. This Ti/Au is subjected to Ti etching, and Au is eliminated by lift-off. An SiO2 film is formed on the surface of a substrate 1, and an insulating layer is formed. After mask alignment, SiO2 at a bonding pad part is etched and eliminated by using NH4; Au/Au is formed on the whole surface by vacuum deposition or the like; AuGe/Au on the SiO2 is eliminated by lift-off using acetone or the like; an alloy layer 7 of AuGe and GaAs is formed by heat treatment; a multi layer metal 8 is formed on the layer 7. As a result, an insulating layer is not formed just under the pad 8. |
