| 摘要 |
PURPOSE:To easily obtain a high electric resistance value by specifying the atomic ratio of B/C. CONSTITUTION:A boron carbide of 0.5-2.0mum in particle diameter is prepared by mixing elemental boron and carbon at various mixing ratios and causing them to react each other at 2,300 deg.C, and then, crushing the reaction product. Then the particles are hot-press sintered with a pressing pressure of 200-300kg at a sintering temperature of 1,500-1,800 deg.C. At the time of the sintering, an Al2O3-molded body is used as a spacer and a target of a boron carbide having a thickness of 10mm and containing 100ppm of Al2O3 is obtained. Then a thin film is formed by performing sputtering with the target. The thin film thus formed in such way shows a resistance value of 10<3>-10<8>OMEGA when the atomic ratio of B/C of the thin film is larger than 1.5 and smaller than 4. While the boron carbide is produced by sputtering in the example mentioned above, the film producing method is not limited to the above-mentioned method. |
