| 摘要 |
PURPOSE:To obtain an excellent close contact state by a method wherein, when a mask having a specified wiring pattern is brought into close contact with a semiconductor wafer on which a resist is spread, and the resist is exposed to ultraviolet ray irradiation through a mask, the exposure intensity is made small at the intial period, and large after a perscribed time is passed. CONSTITUTION:A wafer 2 is mounted on a chuck 1 in a wafer retaining cham ber 4; from a plurality of holes arranged on the chuck 1, nitrogen gas, e.g., is jetted to levitate the wafer 2; the air in the retaining chamber 4 is discharged in the arrow direction by vacuumizing, and the wafer is brought into close contact with a mask 5 arranged above the wafer 2. In this state, ultraviolet ray 6 is made to irradiate from above the mask 5, by using a mercury lamp or the like; the resist on the wafer 2 is exposed according to a wiring pattern arranged on the mask. The initial exposure intensity is made small as shown by l1; after a prescribed time is passed, the intensity is increased as shown by l2; thereby averaging the generation amount of nitrogen gas caused by the optical crosslinking reaction of the resist, and improving the adhesion. |
