| 摘要 |
PURPOSE:To enhance photosensitivity and to lower residual potential by successively laminating an a-SiGe photoconductive layer, a-Si photoconductive layer and a-SiC photoconductive layer. CONSTITUTION:The photoconductive layer 2 consisting of amorphous silicon germanium (a-SiGe), the photoconductive layer 3 consisting of amorphous silicon (a-Si), the photoconductive layer 4 consisting of amorphous silicon carbide (a-SiC), and an org. photosemiconductor layer 5 are successively laminated on a conductive substrate 1. The atomic compsn. ratio of the silicon (Si) element and carbon (C) element of the amorphous silicon germanium are in a 0.05<x<0.5 range in the X value of Si1-xGe and the atomic compsn. ratio of the silicon (Si) element and carbon (C) of the amorphous silicon carbide layer is in a 0.05<y<0.5 range in the y value of Si1-yCy. The high photosensitivity is obtd. in this way and the residual potential is lowered. |
