| 摘要 |
<p>An LIGT device characterized by low specific on-resistance and short turn-off time includes an anode structure that comprises highly doped spaced-apart segments (50, 51, 52) of one conductivity type anode regions formed in a layer (10) of the other conductivity type drift region. In one such device, the drain region further includes highly doped portions (53, 54) of the other conductivity type short regions formed in the layer in the spaces between the segments (50, 51, 52). In another embodiment, the anode structure includes Schottky-barrier contacts formed between the portions (66, 67, 68) of the layer (10) remaining between the segments (57, 64, 65), and the deposited anode electrode material (55).</p> |
