发明名称 |
Method of manufacturing a semiconductor body for a low voltage type spark plug. |
摘要 |
<p>A low-voltage type spark plug including; a centre electrode (2) having a firing-tip(21) mounted within a tubular insulator (4) which in turn is placed within a metallic shell (1); a ground electrode (11) in electrical contact with said metallic shell (1) and defining with said firing-tip (21) of the centre electrode (2), a spark-gap (10); a semi-conductor body (3), a surface (31) of which is mounted adjacent the spark-gap in electrical contact with both the centre and ground electrodes (2, 11), characterised in that said semi-conductor body (3) is formed from silicon carbide particles of average diameter less than 5 microns and alumina particles of average diameter less than 1 micron in a ratio by weight in the range 65:35 to 80:20 inclusive and in that the silicon carbide and the alumina particles have been mixed with a suitable amount of binder and hot press sintered at a temperature greater than or equal to 1800 degrees Celsius and pressure greater than or equal to 200 kgf/cm<2>.</p> |
申请公布号 |
EP0361644(A1) |
申请公布日期 |
1990.04.04 |
申请号 |
EP19890305957 |
申请日期 |
1989.06.13 |
申请人 |
NGK SPARK PLUG CO., LTD |
发明人 |
SUZUKI, TAKAHIRO;IZUOKA, YUKI;AOKI, NOBORU;MATSUMURA, SHUZO |
分类号 |
H01T13/38;H01T13/52 |
主分类号 |
H01T13/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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