| 摘要 |
PURPOSE:To simplify the process and to obtain a surface acoustic wave device whose characteristic is excellent by processing an aluminum thin film by adopting the photolithography method, using a positive resist as a photo resist and an organic alkali group development liquid as an etching liquid. CONSTITUTION:A lithium boride substrate 1 is prepared, the surface is ground and rinsed. Then the aluminum thin film 2 is vapor-deposited on the surface, a resist film 3 made of a specific resist material is formed on the film and pre-baking is applied. Then a photo mask 4 with a prescribed electrode pattern is covered and the substrate is exposed by an ultraviolet ray. Then the substrate 1 subject to exposure treatment is treated by using the specific development liquid as the etching solution and the development, etching and rinsing are treated altogether. Moreover, the resist film 3 left on the prescribed pattern is peeled by applying the rinse processing, then lithium boride crystal having the prescribed aluminum electrode is obtained. |
