发明名称 Opto-electronic image sensor arrangement
摘要 Thin-film photodiodes arranged in lines on a substrate are connected to read-out chips arranged on the same substrate. They are connected thereto via thin-film interconnects which differ in length and which run parallel to one another. For compensating the interconnect capacitances given neighboring interconnects which differ in length, their widths are dimensioned smaller or larger in one or more interconnect sub-sections. Thus, the sum of the coupling capacitances of all sub-sections of two neighboring interconnects always have the same value, independently of the overall length. The invention eliminates the inhomogeneities in the sensor signal caused by the different lengths of the read-out lines. The invention is employed for opto-electronic reading equipment, particularly in office automation.
申请公布号 US4914504(A) 申请公布日期 1990.04.03
申请号 US19880202553 申请日期 1988.06.06
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 ROSAN, KARLHEINZ
分类号 H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L27/146;H04N1/028;H04N5/335 主分类号 H01L21/3205
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