发明名称 |
Method of manufacturing a semiconductor device having tapered pillars |
摘要 |
A method of manufacturing a semiconductor device having multi-layer structure with tapered pillars containing a refractory metal used for connecting interconnection layers. An aluminum containing layer is formed on the semiconductor substrate and a refractory metal (or silicide and nitride) containing layer is formed on the aluminum layer. These two layers are selectively and successively etched to form an interconnection layer having thereon a pattern formed of the refractory metal containing layer. The pattern is selectively etched to remove a portion of the pattern from the interconnection layer and leave a portion on the interconnection layer to thereby form pillars. The tapered portions are formed by isotropic etching.
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申请公布号 |
US4914056(A) |
申请公布日期 |
1990.04.03 |
申请号 |
US19880281924 |
申请日期 |
1988.12.05 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OKUMURA, KATSUYA |
分类号 |
H01L21/3205;H01L21/44;H01L21/768;H01L23/522 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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