发明名称 |
TOP IMAGED AND ORGANOSILICON TREATED POLYMER LAYER DEVELOPABLE WITH PLASMA |
摘要 |
<p>FI9-64-046 TOP IMAGED PLASMA DEVELOPABLE RESISTS The present invention is concerned with a method of converting the upper portion of a layer of polymeric resist into a dry etch resistant form. Oxygen plasma can then be used to develop the entire resist structure. The layer of polymeric resist is exposed to patterned radiation which creates labile and reactive hydrogens within the resist by molecular rearrangement. The reactive hydrogens within the upper portion of the layer are subsequently reacted with a silylating reagent to form a dry etch resistant compound. When the polymeric resist material is highly absorbent of the radiation, the reactive hydrogens are created only in the upper portion of the layer; when the polymeric resist material is more transparent, the formation of the dry etch resistant upper portion must be controlled via the degree of penetration of the silylating reagent into the layer.</p> |
申请公布号 |
CA1267378(A) |
申请公布日期 |
1990.04.03 |
申请号 |
CA19850495093 |
申请日期 |
1985.11.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHIONG, KAOLIN N.;CHOW, MING-FEA;YANG, JER-MING |
分类号 |
G03F7/36;G03C1/00;G03F7/004;G03F7/038;G03F7/26;(IPC1-7):G03F7/26 |
主分类号 |
G03F7/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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