发明名称 |
Photodetector with player covered by N layer |
摘要 |
Photodetectors that produce detectivities close to the theoretical maximum detectivity include an electrically insulating substrate carrying a body of semiconductive material that includes a region of first conductivity type and a region of second conductivity type where the first region overlies and substantially covers the top and sides of the region of second conductivity type and where the junction between the first and second regions creates a depletion layer that separates minority carriers in the region of second conductivity type from majority carriers in the region of first conductivity type. These photodetectors produce high detectivities where radiation incident on the detectors has wavelengths in the range of about 1 to about 25 microns or more, particularly under low background conditions.
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申请公布号 |
US4914495(A) |
申请公布日期 |
1990.04.03 |
申请号 |
US19850804711 |
申请日期 |
1985.12.05 |
申请人 |
SANTA BARBARA RESEARCH CENTER |
发明人 |
NORTON, PAUL R.;MOROZ, MICHAEL;TALLEY, CAROL S. |
分类号 |
H01L31/0296;H01L31/103;H01L31/18 |
主分类号 |
H01L31/0296 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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