| 摘要 |
In manufacturing of semiconductor wafer with good flatness in front and rear sides, initially a sigle silicon ingot is cultivated by a diamond tool with 0.2 μm surface roughness. A slicer glade is moved toward the support rod to slice the ingot to obtain wafer with 0.785mm thickness. The wafer cultivating both sides is etched in mixture acid solution comprising HF, HNO3, CH3COOH and rinsed in clean wafer and then dried.
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