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发明名称
PROCEDE DE FABRICATION D'UNE REGION D'ISOLATION D'ELEMENT D'UN DISPOSITIF A SEMI-CONDUCTEURS
摘要
申请公布号
FR2598557(B1)
申请公布日期
1990.03.30
申请号
FR19870005903
申请日期
1987.04.27
申请人
SEIKO EPSON CORP
发明人
ISAMU NAMOSE
分类号
H01L21/762;(IPC1-7):H01L21/76
主分类号
H01L21/762
代理机构
代理人
主权项
地址
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