发明名称 MANUFACTURE OF SELF-ALIGNMENT FILM TRANSISTOR
摘要 PURPOSE: To cut down the cost of production by increasing the rate of yield and decreasing the number of alignment tools by a method wherein a self- alignment operation is automatically conducted irrespective of slight change in the size of glass used for each process. CONSTITUTION: A stack is formed by conducting tripple layer coating on a gate consisting of a glass substrate 1, a transparent electrode 2 and a metal electrode 3, and dual-tone photoresist is coated. This photoresist 7 is exposed from above by wide zone ultraviolet rays using a mask having an opaque region, a transparent region for selected wavelength and a transparent region, a developing operation is conducted, and both side parts of the dual photoresist are completely removed. Then, the stack is etched until it reaches the glass substrate, the stack is exposed from the bottom face through the substrate using near ultraviolet rays, a developing operation is conducted, non-exposed resist 9 is removed leaving the part on the metal electrode, and lastly, the passivated layer 6 on the upper part of the stack is removed.
申请公布号 JPH0290629(A) 申请公布日期 1990.03.30
申请号 JP19880203978 申请日期 1988.08.18
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 UIRIAMU DAINAAN HINSUBAAGU SAADO;UEBUSUTAA YUUJIN HAWAADO;KAARUTON GURANTO UIRISON
分类号 H01L21/027;H01L21/30;H01L21/336;H01L27/12;H01L29/423;H01L29/49;H01L29/78;H01L29/786 主分类号 H01L21/027
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