| 摘要 |
PURPOSE:To remove an increase in the unevenness of a supply voltage, which is generated in a semiconductor chip, by a method wherein a semiconductor integrated circuit comprises pairs of bump terminals provided on the chip, thick wirings of a structure formed correspondingly to those of the bump terminals and a power-supply wiring consisting of metal leads bonded to at least part of the bump terminals and the thick wirings. CONSTITUTION:Metal leads 1E, 1F, 1G, 1H and 1I for power supply use are all extendedly provided to the arrangement region of each unit basic cell 1B and thick wirings 1D and pairs of bump terminals 1C1 and 1C1', which are installed directly under the metal leads, are fixed by pressure simultaneously in a process, in which outer leads 1J for signal use and bump terminals 1CO are fixed by pressure. As a result, the metal leads and the wirings 1D become main power-supply current passages to the unit basic cells 1B of an LSI chip 1A. Therefore, the supply of a power supply current to each unit basic cell 1B beyond the main power-supply current passages can be attained even by branching the wirings 1D, but the power-supply current is distributed by branch wirings for power supply, which are represented and shown by branch wirings 1K, 1L, 1N and 1O for power supply to be formed by wiring layers under one layer from the wirings 1D, in the directions to intersect orthogonally with the laid directions of the wirings 1D. |
