| 摘要 |
PURPOSE:Not only to make a chip small to decrease it in cost but also to enable the effective supply of power by a method wherein a distance between a basic cell and its gate electrode along parallel direction is made short. CONSTITUTION:A diffusion region ps located at a P-channel transistor side is fixed to a potential of VDD and a diffusion region ns is fixed a potential of VSS. Standard cells, which are located in such a state that their gate electrodes are in parallel with each other, are arranged making their P-channel transistor and N-channel transistor face toward their N-channel transistor and P-channel transistor respectively. Therefore, as diffusion layers possessed of the same potential are adjacent to each other, basic cells facing each other can have a diffusion region ill common.,The diffusion region of the same potential is held in common, so that a wiring layer can be used in common when a power is supplied from power wiring layers 309 and 310 located perpendicular to the gate electrode inside a standard cell to the diffusion region and consequently a power can be easily supplied to the diffusion layer. |
