| 摘要 |
PURPOSE:To improve a semiconductor light emitting element in light emitting efficiency by a method wherein the light emitting element has such a multilayer structure that it contains a double hetero-structure composed of semiconductors, whose energy gap are larger than that of an active layer, and the active layer sandwiched between the semiconductors, and a specified layer is formed on a specified active layer. CONSTITUTION:A stripe-like laminar structure composed of an active layer 3, an anti-melt back layer 4, and a clad layer 5 is provided onto a buffer layer 2 formed on a substrate 1, and block layers 6 and 7 are provided to both the sides of the stripe like laminar structure for the formation of a semiconductor laser of InP/InGaAsPAs buried structure. The anti-melt back layer 4 of In1-xGaxP1-yAsy (where 0.21<=X<=0.25, 0.47<=Y<=0.54) is formed on the active layer 3 of In1-xGaxP1-yAsy (where 0.36<=X<=0.40, 0.80<=Y<=0.87). By this setup, as the energy gap difference between the active layer 3 and the anti-melt back layer 4 becomes larger, a carrier trapping effect is made to improve inside the active layer 3 and a slope efficiency improves also. |
