| 摘要 |
PURPOSE:To enable the reduction of erroneous operation of a memory cell at the end of a memory cell block by a method wherein the capacitance of a dummy cell air each end of a memory cell block is made smaller than that of other dummy cells. CONSTITUTION:The width of a capacitive polysilicon film 7'-1, which is made to serve as one electrode of a dummy cell DC' connected to a data line D, is made smaller than that of others. Concerning a dummy cell connected to a data line D', the same process is taken as above. Thereby, the capacitance of the dummy cell arranged at the end of a memory cell block becomes smaller than that of other dummy cells. Therefore, a margin is assured on a cell 'L' side so as to prevent a memory device from deteriorating in level due to the fluctuation of a power voltage and a ground potential and noises. By this setup, the erroneous operation of a memory cell at the end of a memory cell block can be reduced and a semiconductor memory device can be improved in yield. |
