| 摘要 |
PURPOSE:To heap up memory cells in multilayer so as to realize a highly integrated memory device by a method wherein a group of wirings composed of silicon films, whose conductivity type are opposite to each other and which are provided interposing an insulating film between them, are provided, and memory cells where coding is carried out through a contact hole. CONSTITUTION:First wirings 1a-1, 1a-2,... formed of n-type polycrystalline silicon film are formed on a thermal oxide film 5a deposited on a P-type silicon substrate 4a. A silicon oxide film 6a is formed thereon through a CVD method, where holes are bored in the specified regions of the film 6a to form memory coding contact holes 2a-1, 2a-2,..., and second wirings 3a-1, 3a-2,... formed of P-type polycrystalline silicon film are formed thereon. If a contact hole subsists at the intersection of the first and the second wirings, joining can be made there. As a memory device of this design is simple in structure as compared with a MOS transistor, a unit memory cell is small in occupying area and can be easily and densely integrated. |
