| 摘要 |
<p>PURPOSE:To prevent the reaction of an ITO film and silicon nitride film and to prevent short circuiting of diodes by providing the insulating silicon nitride film between a 1st conductive film and a nonlinear resistance film. CONSTITUTION:The insulating silicon nitride film 33 is grown to 30nm film thickness on a lower electrode 32 formed of ITO. The film forming conditions are 5SCMM SiH4, 500SCCM N2, 100pa vacuum degree, 0.08w/cm<3> high frequency electrode density, and 250 deg.C substrate temp. The silicon nitride film 34 is in succession formed by a plasma CVD method. The laminated films of the silicon nitride film 33 and the silicon nitride film 34 are worked to an island shape by a photolithographic method using a 2nd mask. Further, a Cr film is formed to 200nm thickness by a sputtering method and is subjected to etching to form the upper electrodes 35 and data lines 36 of the thin-film nonlinear diode elements. An oriented film is formed on the active element substrate formed in such a manner and the substrate is stuck to a counter substrate, then a liquid crystal is injected between the substrates, by which the liquid crystal device is completed.</p> |
