| 摘要 |
<p>PURPOSE:To make a gate bus line low in resistance by a method wherein a metal film is formed, and a drain electrode connected to the gate bus line and a drain bus line and a source electrode connected to a pixel electrode are formed using a third mask. CONSTITUTION:An oxide film of indium and tin is formed on a glass substrate 1 through a sputtering method, and a transparent gate electrode 2b, a transparent pixel electrode 6b, a drain bus line 5 are formed through a photolithography using a first mask pattern. Next, an SiNx film 7, an a-Si:H film 8, and an n<+>-a- Si:H film 9 are successively formed and laminated. Then, an island of the SiNx film 7, the a-Si:H film 8, and the n<+>-a-Si:H film 9 is formed on the transparent gate electrode 2b and the drain bus line 5 through a photolithography method using a second mask. Next, metal (example: chrome) is formed into a film, and then a gate bus line 3, a drain electrode, and a source electrode 14 are formed through a photolithography method using a third mask. By this setup, a gate bus line small in wiring resistance can be realized.</p> |
