发明名称 INTEGRATED CIRCUIT
摘要 PURPOSE:To improve the wiring efficiency by installing many wiring channels in wiring areas near the centers of two or more divided areas on a semiconductor substrate while a few in wiring areas distant from said centers. CONSTITUTION:Element areas C1-C9 to wire gates and element areas G1-G8 to wire elements in the gates are arranged alternately in the wiring layer 2 of a semiconductor substrate 1. The wiring areas C1, C5, and C9 on both sides of areas divided into two pieces on the semiconductor substrate each have three wiring channels C11-C13, C51-C53, and C91-C93, the wiring areas C2, C4, C6, and C8 near the centers of said areas divided into two pieces each have four wiring channels C21-C24, C41-C44, C61-C64, and C81-C84, and the wiring areas C3 and C7 at the centers of said areas divided into two pieces each have five wiring channels C31-C35 and C71-C75. Many wiring channels are installed in more congested wiring areas, therefore, the utilization efficiency of the wiring areas C1-C9 is evened out to enable efficient wiring.
申请公布号 JPH0289364(A) 申请公布日期 1990.03.29
申请号 JP19880241345 申请日期 1988.09.27
申请人 MATSUSHITA ELECTRON CORP 发明人 TOYONAGA MASAHIKO;TAGUCHI HIROFUMI;KITAGAWA HIROKO
分类号 H01L21/822;H01L21/82;H01L27/04;H01L27/118 主分类号 H01L21/822
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