| 摘要 |
PURPOSE:To reduce the level difference on a wafer and, at the same time, to control the degree of the level difference by changing the width of the light scattering area of the photomask by providing the light scattering area on the margin of the pattern of the photomask. CONSTITUTION:Light scattering areas 14 are formed on the margin of a light shielding area 13. When a photoresist patterns 22 is formed on a material 21 to be etched on a wafer by using the photomask thus prepared, the light used for pattern transfer is scattered by the areas 14 and nuclear images are obtained from the margin of the circuit pattern, indicating tapered patterns 24. When the material to be etched is etched by using this photoresist patterns, the photoresist 25 itself regresses from the marginal section of the pattern and, at the same time, the etching pattern of the material to be etched becomes to form a shape 26 having the tapered sections. Therefore, the disconnection of a coating film used in the succeeding process at the level-difference section can be prevented, and moreover, the tapered sections can be adjusted in size by controlling the width of the light scattering areas. |
