| 摘要 |
PURPOSE:To accomplish higher resolution by removing a resist unsoluble layer first, and then performing an ordinary development. CONSTITUTION:A pattern is exposed on the resist of a negative type by means of an electromagnetic wave or charged particle ray such as light, ultraviolet ray, far ultraviolet ray, X-ray, electron ray, and ion beam. Until the unsoluble layer of an unexposure part 6 is completely removed, a front resist layer is removed by the use of dissolution liquid such as organic solvent and alkali aqueous solution or plasma processing such as oxygen incineration. In the subsequent development, since the unsoluble layer is removed and a soluble layer 7 is exposed, development is speedily proceeded, and a resist pattern 9 is ultimately obtained. Thus, higher resolution can be accomplished. |
