MANUFACTURE OF MIS FIELD-EFFECT TRANSISTOR,申请号JP19880241827-传众专利搜索

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发明名称	MANUFACTURE OF MIS FIELD-EFFECT TRANSISTOR
摘要
申请公布号	JPH0289323(A)	申请公布日期	1990.03.29
申请号	JP19880241827	申请日期	1988.09.27
申请人	NEC CORP	发明人	NAKAMURA KIMIKO
分类号	H01L29/78;H01L21/336	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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