| 摘要 |
PURPOSE:To improve wiring reliability, flattening effect by an interlayer insulation film, and productivity by making an interlayer insulation film in a multilayer wiring structure to be in three-layer structure. CONSTITUTION:A thermal oxide film 2 and first metal wires 3a-3c are formed on a semiconductor substrate 1. Also, an SiO2 film 4 is formed on first-layer metal wires 3a-3c by the plasma CVD method as a wiring protection film and an SiO2 film 5 is formed on this SiO2 film 4 by the sputter method. Also, the SiO2 film 6 is formed on this SiO2 film 5 by the plasma CVD method. Also, a second layer metal wire 7 is formed on the SiO2 film 6 by the sputter method. Thus, since a wiring protection film is formed covering the first layer metal wires 3a-3c, no damage is given to the first layer metal wires 3a-3c even if the semiconductor substrate 2 is flattened by the SiO2 film 5 using the bias sputter method. |
