发明名称 PATTERN FORMING MATERIAL
摘要 PURPOSE:To enable a pattern to be formed by an electron beam exposure method without impairing sensitivity and resolution of a resist by dispersing a specified conductive complex into a general-purpose polymer and using it as a conductivity-enhancing agent for processing the electron beam resist. CONSTITUTION:The conductive complex to be dispersed into the general-purpose polymer is a radical salt comprising a quaternized nitrogen as a cationic moiety and an anionic radical of tetracyanoquinodimethane (TCNQ) or a TCNQ derivative condensed with a hetero ring as an anionic moiety, or its adduct with a neutral TCNQ compound. It is used as the conductivity-enhancing agent for the upper layer of the electron beam resist, and electric charge generated in the resist by irradiating electron beams at the time of the electron beam exposure is dispersed without being trapped in one point by the conductivity of the agent of the upper layer, thus permitting deviation of the pattern formed by the exposure to be effectively prevented without interaction of charge.
申请公布号 JPH0290166(A) 申请公布日期 1990.03.29
申请号 JP19880240943 申请日期 1988.09.28
申请人 FUJITSU LTD 发明人 WATABE KEIJI;SAITO KAZUMASA;SHIBA SHOJI;NAMIKI TAKAHISA;YONEDA YASUHIRO
分类号 G03F7/004;G03F7/11;H01B1/12;H01L21/027;H01L21/30 主分类号 G03F7/004
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