发明名称 SEMICONDUCTOR OPTICAL ELEMENT
摘要 PURPOSE:To change the oscillation wavelength greatly by controlling current that flows to an electrode so as to change resonance loss, and making the wavelength of oscillation between quantum levels in a quantum well activation layer variable. CONSTITUTION:This is made into the one of such resonator length that the oscillation of n=2 can be obtained in case that, for example, currents I2 are let flow only to an upper electrode 2. Hereupon, if currents I1 and I3 are further let flow to upper electrodes 1 and 3 too on both sides, wave guide paths combines, and effective width of the wave guide expands, and resonator loss decrease, Accordingly, it oscillates with low injenction currents, and changes to intertransition oscillation of n=1, and charges into long wave length. The amounts of this change can be made greater, the thinner the thickness of a quantum well activation layer 21 is made, for example, when the quantum well activation layer 21 is made in about 100Angstrom , the width of change becomes about 500Angstrom . For the center position of oscillation, if I1=I3, the oscillation can be done similar to the case that only I2 are injected below the upper electrode 2. Also, if the currents are injected so that it may be I1 I3, the position of its oscillation can be shifted.
申请公布号 JPH0289383(A) 申请公布日期 1990.03.29
申请号 JP19880242014 申请日期 1988.09.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 TOKUDA YASUKI;TSUKADA NORIAKI
分类号 H01S5/00;H01S5/042;H01S5/06;H01S5/0625;H01S5/34 主分类号 H01S5/00
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