| 摘要 |
PURPOSE:To eliminate formation of an acute angle at a ground end face even after the rear has been ground by a method wherein, in a semiconductor wafer provided with a double cross-sectional structure by a ground part which has been ground and removed and by a part on it which is used actually, a rounded part is formed in such a way that a mounted is formed at an end part of the part which is used. CONSTITUTION:A semiconductor wafer is used as a transistor for ultrahigh- frequency oscillation use; a semiconductor substrate is used as a collector; in order to obtain a large oscillation gain, it is desirable that a series resistance of the collector is as small as possible; it is required to finish a chip device with a thickness of 250mum. In this case, the semiconductor wafer used for this manufacture is, e.g., 650mum<t> thick; accordingly, the rear is ground by 400mum before a dicing operation in a final process and is finished to be 250mum thick. At an end part, there exists an asymmetric shape as a shape formed by bonding a semiconductor wafer 2, with a thickness of 250mum, which is used and a ground part 3, i.e., a maximum overhang part in a part of the semiconductor wafer 2; an acute angle is not formed at the end part after the ground part 3 has been removed and polished.
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