| 摘要 |
<p>PURPOSE:To obtain electric resistance material whose resistivity is large, whose resistance temperature coefficient is small, and whose environmental resistance is excellent, by adding a specific amount of oxygen to ternary alloy wherein boron is added to chromium aluminum alloy containing a specific amount of aluminum. CONSTITUTION:Oxygen of 10-30atomic percent is added to ternary alloy wherein boron of 30-70atomic percent is added to chromium aluminum alloy containing aluminum of 10-40atomic percent. That is, composition ratio of chromium, aluminum, and boron of such a Cr-Al-B-O system ternary alloy is in a region of 3 componentscomposition figure surrounded by the following four points; A(63, 7, 30), B(27, 3, 70), C(18, 12, 70) and D(42, 28, 30). Thereby, electric resistance material whose resistivity is large, whose resistance temperature coefficient is small, and whose environmental resistance is excellent can be obtained. In this case, the structure of the electric resistance material is preferable to be amorphous. As a result, a chip resistor, a high density integrated resistance network, etc. with high precision and reliability can be formed.</p> |
