| 摘要 |
PURPOSE:To alleviate the step caused by a connecting hole by removing Pd other than that in contact with a connecting hole through a low temperature processing to the Pd film formed after formation of the connecting hole and rare fluoric acid processing. CONSTITUTION:An N layer 2 is provided on a P type Si substrate 1 an ultraminiature connecting hole 4 is formed on an SiO2 film 3 by the reactive ion etching. A Pd 5 is deposited over the entire part by the electron beam evapo- ration method and it is heat processed under the temperature of 250-350 deg.C and thereby a Pd2Si 6 is formed at the area closely in contact with the Si. On the other hand, Pd on the SiO2 has remarkably bad contact property. When an element is then dipped into the liquid of HF:H2O=200:1, the Pd on the SiO2 is removed by the self-alignment. According to this constitution, since a virtual stepped part of the film 3 is alleviated, substantially thick side wall of connecting window can be formed at the time of forming the Al wiring 7 and disconnection at the step part can be eliminated and thereby reliability of wiring can be improved. |
