Magneto-electric probe and method of using same.

摘要

The invention relates to the measurement of magnetoelectric effects, and more particularly to the measurement of magnetoelectric effects in specimens of semiconductor material. There is proposed a probe for measuring magnetoelectric effects, characterised in that it comprises a metallic plane covered with a substrate (10) having an electrically conductive surface and an electrically insulating upper surface comprising four electrodes (12, 14, 16, 18) each having a free end, the free ends of the electrodes being opposite to one another and being separated from one another by a free space, the ends of the electrodes and possibly the free space being covered with a dielectric layer (36). A specimen (40) of semiconductor material is applied to this probe and there is applied to the specimen by capacitive coupling an ultra-high-frequency current on one of the electrodes; the resultant signal is read, in the presence of a magnetic field, on the other three electrodes. <IMAGE>