| 摘要 |
1. A reactor chamber for carrying out the epitaxial growth from the vapour phase of layers of semiconductor materials on semiconductor substrates, this chamber containing a sample carrier for the substrate, while in this chamber circulate parallel to the substrate gaseous compounds at a pressure and a temperature suitable to obtain the epitaxial growth of the monocrystalline layers on the substrate, characterized in that it is provided with a first means consisting of a regulated device for heating the part of the wall of the chambre opposite to the sample carrier, this wall part being designated as the ceiling of the chamber, in order to produce variations of the temperature profile at said ceiling, with a second means consisting of a regulated device for heating the sample carrier in order to produce variations of the temperature profile of said sample carrier independently of those of the ceiling of the chamber, and with a third means consisting of a device for rotating the sample carrier about an axis perpendicular to said plane, these three means cooperating in such a manner that at each point of the substrate on the one hand the rate of growth is uniform and on the other hand the composition of the epitaxial layer is uniform.
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