| 摘要 |
PURPOSE:To form the insulating film consisting of the mixed film of the oxide of a metal implanted and the oxide of a semiconductor element by implanting metallic ions into a semiconductor substrate and thermally treating the whole under an oxidizing atmosphere. CONSTITUTION:The metallic ions 5 are implanted in the element regins 3, 4 of the semiconductor substrate 1, and the metal 6 implanted is shaped. The whole is thermally treated under the oxidizing atmosphere, and the insulating films 7 composed of the mixed film of the oxide of the metal 6 implanted and the oxide of the semiconductor element forming the semiconductor substrate 1 are shaped onto the element regions 3, 4. Titanium, etc. are used as the metallic ions, and the insulating films having a dielectric constant are obtained. |
